| PART |
Description |
Maker |
| KM41464A KM41464A-12 KM41464A-15 KM41464AJ KM41464 |
64K x 4-Bit DRAM
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE 64K的4位动态内存页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M10B11664A M10B11664A-35J |
64K X 16 DRAM FAST PAGE MODE
|
ETC
N.A.
|
| UPD41264C-12 |
64K X 4 VIDEO DRAM, 120 ns, PDIP24
|
|
| NTE2164 NTE-DRAM NTE4164 NTE2102 NTE2128 NTE2117 N |
NMOS / 64k DRAM
MICROPROCESSOR & MEMORY CIRCUITS
|
NTE Electronics
|
| CY27H512-30JC CY27H512-30WC CY27H512-35HC CY27H512 |
64K x 8 High-Speed CMOS EPROM
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 25 ns, PDSO28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, PDSO28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 30 ns, PDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 55 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 55 ns, CDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 45 ns, CQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDIP28
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 UVPROM, 70 ns, CQCC32
64K x 8 High-Speed CMOS EPROM 64K X 8 OTPROM, 70 ns, PDSO28
CAP SM CER 2200PFD 50V 10% X7R 0805
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
| W27C520S-70 W27C520 W27C520W-90 W27C520S-90 W27C52 |
64K X 8 ELECTRICALLY ERASABLE EPROM 64K X 8 EEPROM 5V, 70 ns, PDSO20
BOX 2.53X1.73X.65 W/4 BTNS ALMOND 64K X 8 EEPROM 3V, 90 ns, PDSO20
From old datasheet system
|
Winbond Electronics, Corp.
Winbond Electronics Corp
WINBOND[Winbond]
|
| AS7C3364FT36B-80TQIN AS7C3364FT32B AS7C3364FT32B-1 |
From old datasheet system
Shielding Gasket; Gasket Style:D-Shaped; Body Material:Beryllium Copper alloy #C17200; Height:.11"; Length:16"; Mounting Type:Adhesive; Thickness:.0027"; Width:.28" 64K X 32 STANDARD SRAM, 10 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 32 STANDARD SRAM, 6.5 ns, PQFP100
3.3V 64K x 32/36 Flow Through Synchronous SRAM 64K X 36 STANDARD SRAM, 7.5 ns, PQFP100
|
Alliance Semiconductor ...
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor, Corp.
|
| IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位）
P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
| CYM1730 1730 |
64K x 24 Static RAM Module(64K x 24 静态RAM模块) 64K的24静态RAM模块4K的24静态RAM的模块）
From old datasheet system
|
Cypress Semiconductor Corp.
|
| CY7C1021CV26-15ZE |
1-Mbit (64K x 16) Static RAM 64K X 16 STANDARD SRAM, 15 ns, PDSO44
|
Cypress Semiconductor, Corp.
|
| CY7C1021CV26-15ZE CY7C1021CV26 CY7C1021CV26-15ZET |
64K X 16 STANDARD SRAM, 15 ns, PDSO44
1-Mbit (64K x 16) Static RAM
|
CYPRESS SEMICONDUCTOR CORP
CYPRESS[Cypress Semiconductor]
|
